Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates-Reference-Cited by-同舟云学术

Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates

Published:1997-01 Issue:1 Volume:31 Page:15-18
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zhukov A. E.,Egorov A. Yu.,Ustinov V. M.,Tsatsul’nikov A. F.,Maksimov M. V.,Faleev N. N.,Kop’ev P. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187044.pdf

Reference10 articles.

1. J. Lee, W. F. Mayo, and T. Tsakalakos, J. Electron. Mater. 21, 867 (1992).

2. W. J. Bartels and W. Nijman, J. Cryst. Growth 44, 518 (1978); F. Genova, G. Morello, and C. Rigo, J. Vac. Sci. Technol. B 5, 811 (1987).

3. J. W. Matthews, J. Vac. Sci. Technol. 12, 126 (1975).

4. R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).

5. M. Tacano, Y. Sugiyama, Y. Takeuchi, and Y. Ueno, J. Electron. Mater. 20, 1081 (1991).

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