Strained‐layer Ga1−xInxAs/InP avalanche photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100001
Reference13 articles.
1. Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InP
2. Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices
3. Type-I to type-II superlattice transition in strained layers ofInxGa1−xAs grown on InP
4. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
5. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
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1. Strain Effect in Semiconductors;2010
2. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
3. X-ray standing wave studies of strained InxGa1−xAs/InP short-period superlattices;Journal of Applied Physics;2003-05
4. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
5. A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells;Applied Physics Letters;1999-05-03
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