Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.1320/fulltext
Reference15 articles.
1. Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InP
2. Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy
3. Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP
4. High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy
5. Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials
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