Optical properties of AlxInyGa1−x−yAs/AlzGawIn1−z−wAs quantum wells under electric and magnetic fields for telecommunication applications
Author:
Funder
Sivas Cumhuriyet Üniversitesi
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Fluid Flow and Transfer Processes
Link
https://link.springer.com/content/pdf/10.1140/epjp/s13360-023-03742-7.pdf
Reference20 articles.
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2. A. Ghods, C. Zhou, I.T. Ferguson, Enhancement in electrical and optical properties of field-effect passivated GaN blue light emitting diodes. Semicond. Sci. Technol. 36(11), 115018 (2021). https://doi.org/10.1088/1361-6641/ac1b12
3. J. Piprek, G. Muziol, M. Siekacz, C. Skierbiszewski, GaN-based bipolar cascade lasers with 25 nm wide quantum wells. Opt. Quant. Electron. 54(1), 62 (2022). https://doi.org/10.1007/s11082-021-03455-0
4. Y. Lan, G. Yang, Y. Liu, Y. Zhao, Z. Wang, T. Li et al., 808 nm broad-area laser diodes designed for high efficiency at high-temperature operation. Semicond. Sci. Technol. 36(10), 105012 (2021). https://doi.org/10.1088/1361-6641/ac2160
5. B.O. Alaydin, E. Ozturk, S. Elagoz, Interband transitions dependent on indium concentration in Ga1–xInxAs/GaAs asymmetric triple quantum wells. Int. J. Mod. Phys. B 32(05), 1850052 (2018). https://doi.org/10.1142/s0217979218500522
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2. Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure;The European Physical Journal Plus;2023-11-14
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