Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission-Reference-Cited by-同舟云学术

Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Published:2019-12-28 Issue:24 Volume:126 Page:245702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tian Kangkai¹²,Chu Chunshuang¹²,Che Jiamang¹²,Shao Hua¹²,Kou Jianquan¹²,Zhang Yonghui¹²,Zhou Xingye³,Feng Zhihong³,Wei Tongbo⁴^ORCID,Zhang Zi-Hui¹²^ORCID

Affiliation:

1. Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, People’s Republic of China

2. Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, People’s Republic of China

3. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, People’s Republic of China

4. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funder

Program for Top 100 Innovative Talents in Colleges and University of Hebei Province

Program for 100-Talent-Plan of Hebei province

Suzhou Institute of Nano-Tech and Nano-BionicsResearch Found of Chinese Academy of Science

State Administration of Science, Technology and Industry for National Defence

Beijing Natural Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5127916

Reference35 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. AlGaN photonics: recent advances in materials and ultraviolet devices

3. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

4. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

5. Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

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