Enhancement in electrical and optical properties of field-effect passivated GaN blue light emitting diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac1b12/pdf
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5. Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes;Lee;Sci. Rep.,2019
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3. In Situ AlGaN Interlayer for Reducing the Reverse Leakage Current of InGaN Light-Emitting Diodes;IEEE Electron Device Letters;2023-05
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