Enhancement in electrical and optical properties of field-effect passivated GaN blue light emitting diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac1b12/pdf
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5. Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes;Lee;Sci. Rep.,2019
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1. Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film;Vacuum;2023-07
2. In Situ AlGaN Interlayer for Reducing the Reverse Leakage Current of InGaN Light-Emitting Diodes;IEEE Electron Device Letters;2023-05
3. Optical properties of AlxInyGa1−x−yAs/AlzGawIn1−z−wAs quantum wells under electric and magnetic fields for telecommunication applications;The European Physical Journal Plus;2023-02-04
4. Back‐Contacted Carrier Injection for Scalable GaN Light Emitters;physica status solidi (a);2021-11-23
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