Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference33 articles.
1. Reliability study on deep-ultraviolet photodetectors based on ZnGa2O4 epilayers grown by MOCVD;Horng;Appl. Surf. Sci.,2021
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3. Deposition of Ga2O3 thin films by liquid metal target sputtering;Zubkins;Vacuum,2023
4. High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: analysis of photovoltaic and carrier transit time properties;Dalapati;J. Vac. Sci. Technol. B,2022
5. Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: analysis of the influence of growth temperature;Dalapati;Sens. Actuators A Phys.,2021
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