Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3437655
Reference60 articles.
1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
2. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
3. Strained Si CMOS (SS CMOS) technology: opportunities and challenges
4. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
5. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
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