Author:
Rim K.,Anderson R.,Boyd D.,Cardone F.,Chan K.,Chen H.,Christansen S.,Chu J.,Jenkins K.,Kanarsky T.,Koester S.,Lee B.H.,Lee K.,Mazzeo V.,Mocuta A.,Mocuta D.,Mooney P.M.,Oldiges P.,Ott J.,Ronsheim P.,Roy R.,Steegen A.,Yang M.,Zhu H.,Ieong M.,Wong H.-S.P.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Si/SiGe high speed field effect transistors;Ismail;IEDM Tech Digest,1995
2. High performance 0.25 mm p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation;Kesan;IEDM Tech Digest,1991
3. Novel fully-depleted SiGe-on-insulator p-MOSFETs with high-mobility SiGe surface channels;Tezuka;IEDM Tech Digest,2001
4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys;Fischetti;J Appl Phys,1994
5. Comparative study of phonon limited mobility of two dimensional electrons in strained and unstrained Si metal oxide semiconductor field effect transistors;Takagi;J Appl Phys,1994
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