Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications-Reference-Cited by-同舟云学术

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Published:2021-11-24 Issue:1 Volume:122 Page:50-131
ISSN:0009-2665
Container-title:Chemical Reviews
language:en
Short-container-title:Chem. Rev.

Author:

Zhao Yuda¹²^ORCID,Gobbi Marco³⁴⁵,Hueso Luis E.⁴⁵^ORCID,Samorì Paolo¹

Affiliation:

1. University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France

2. School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People’s Republic of China

3. Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain

4. CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain

5. IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain

Publisher

American Chemical Society (ACS)

Subject

General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemrev.1c00497

Reference623 articles.

1. Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff.

2. Performance and design considerations for gate-all-around stacked-NanoWires FETs

3. Strained Si CMOS (SS CMOS) technology: opportunities and challenges

4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

5. High Mobility III-V MOSFETs For RF and Digital Applications

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