Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Author:

Jing Yibo,Xu Hao,Miao Dongming,Guo Yiwei,Han Jia,Wang Lin,Song Jianjun,Dai Xianying

Publisher

Springer Science and Business Media LLC

Reference25 articles.

1. Rim K, Anderson R, Boyd D et al (2003) Strained Si CMOS (SS CMOS) technology: opportunities and challenges. Solid-State Electron 47:1133–1139

2. Zhang R et al (2017) Nanoscale Integrated Circuits——The Manufacturing Process, 2nd edn. Beijing, China

3. Yang BF, Cai M (2011) Advanced strain engineering for state-of-the-art nanoscale CMOS technology. Sci Chin Inf Sci 54:946–958

4. Chen C-H, Lee TL, Hou TH et al (2004) Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application. Digest of Technical Papers. 2004 Symposium on VLSI Technology. Honolulu: IEEE 2004: 56–57

5. Huang R, Zhang G, Li Y et al (2006) SOI CMOS technology and its applications, 1st edn. Beijing, China

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