Normally Off WSe<sub>2</sub> Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping-Reference-Cited by-同舟云学术

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Normally Off WSe₂ Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Published:2022-11-17 Issue:12 Volume:5 Page:18462-18468
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Lee Dongryul¹,An Jin Yong²,Lee Chul-Ho²³^ORCID,Bong Ki Wan¹^ORCID,Kim Jihyun⁴^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering, Korea University, Seoul02841, South Korea

2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul02841, South Korea

3. Department of Integrative Energy Engineering, Korea University, Seoul02841, South Korea

4. School of Chemical and Biological Engineering, Seoul National University, Seoul08826, South Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Institute of Civil-Military Technology Cooperation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c04283

Reference45 articles.

1. Ambipolar 2D Semiconductors and Emerging Device Applications

2. WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

3. Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering

4. Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices

5. Two‐Dimensional Semiconductors: From Materials Preparation to Electronic Applications

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