Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering
Author:
Affiliation:
1. ECEPDPM‐IIITDMP.O. Khamaria, Dumna Airport RoadJabalpurMadhya PradeshIndia
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.0283
Reference13 articles.
1. International technology roadmap for semiconductors 2011 Edition
2. A computational study of dopant‐segregated Schottky barrier MOSFETs;Zeng L.;IEEE Trans. Nanotechnol.,2010
3. Performance study of a Schottky barrier double‐gate MOSFET using a two‐dimensional analytical model;Schwarz M.;IEEE Trans. Electron Devices,2013
4. Overview and status of metal S/D Schottky-barrier MOSFET technology
5. A comparative study of dopant‐segregated Schottky and raised source/drain double‐gate MOSFETs;Vega R.A.;IEEE Trans. Electron Devices,2008
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