A Comparative Study of Short Gate and Full Gate Dielectric Modulated Schottky Barrier TFET for Biosensing Application-Reference-Cited by-同舟云学术

A Comparative Study of Short Gate and Full Gate Dielectric Modulated Schottky Barrier TFET for Biosensing Application

Published:2022-05-12 Issue:18 Volume:14 Page:12223-12233
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Poojari Nischit Nagesh,Singh Rishabh Raj,Ahmed Nafis,Kale Sumit^ORCID

Funder

Science and Engineering Research Board

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01924-z.pdf

Reference35 articles.

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3. Luong JHT, Male KB, Glennon JD, Sep (2008) Biosensor technology: technology push versus market pull. Biotechnol Adv 26(5):492–500. https://doi.org/10.1016/j.biotechadv.2008.05.007

4. Venkatesh P, Nigam K, Pandey S, Sharma D, Kondekar PN (2017) A dielectrically modulated electrically doped tunnel FET for application of label-free. Biosensor 109:470–479

5. Kannan N, Kumar MJ (2013) Dielectric-modulated impact-ionization MOS transistor as a labelfree biosensor. IEEE Electron Device Lett 34(12):1575–1577

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