A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123904
Reference9 articles.
1. Multiplexed 256 Element Ingaas Detector Arrays For 0.8-1.7 um Room-Temperature Operation
2. Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation
3. Thin multiplication region InAlAs homojunction avalanche photodiodes
4. High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product
5. A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 mu m
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1. Monolithically Integrable SQW High Speed Waveguide Photodiode With InGaAs/InP Graded Bandgap QW and SL Cladding;Journal of Lightwave Technology;2022-10-15
2. Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm;Journal of Crystal Growth;2020-04
3. 2.25- $\mu$ m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP;IEEE Photonics Technology Letters;2017-01-01
4. Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties;RSC Advances;2015
5. Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application;Journal of Crystal Growth;2012-08
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