Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Diode-laser absorption measurements of CO 2 , H 2 O, N 2 O, and NH 3 near 2.0 μm
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4. InGaAs/InGaAsP Quantum Well Laser at 2.04 µm for Diode Spectroscopy of Carbon Dioxide Isotope
5. 80<tex>$^circ$</tex>C Continuous-Wave Operation of 2.01-<tex>$mu$</tex>m Wavelength InGaAlAs–InP Vertical-Cavity Surface-Emitting Lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate;Applied Physics Letters;2023-04-03
2. Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects;Journal of Electronic Materials;2022-08-23
3. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
4. Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure;Acta Physica Sinica;2021
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