Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells
2. Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using anin situcurvature sensor
3. Routine growth of InP based device structures using process calibration with optical in-situ techniques
4. Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
5. Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼0.98 μm) grown by gas‐source molecular beam epitaxy
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1. Epitaxial growth conditions and interface quality of InGaAs/GaAsP multiple quantum wells;Materials Science in Semiconductor Processing;2024-12
2. Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements;Journal of Applied Physics;2024-04-17
3. InGaP Solar Cell with InGaP Multiple Quantum Wells Grown under Optimized V/III Ratio;physica status solidi (a);2023-11-22
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5. Development of strain compensated InGaAs/InGaP multiple quantum wells in the 1.05–1.50 eV energy range for multijunction solar cells;Micro and Nanostructures;2023-08
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