In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼0.98 μm) grown by gas‐source molecular beam epitaxy
2. Strain compensated InGaAs-GaAsP-InGaP laser
3. Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs
4. Growth of strain‐balanced InAsP/InGaP superlattices for 1.06 μm optical modulators
5. A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
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1. Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements;Journal of Applied Physics;2024-04-17
2. Development of strain compensated InGaAs/InGaP multiple quantum wells in the 1.05–1.50 eV energy range for multijunction solar cells;Micro and Nanostructures;2023-08
3. Reduction of non-radiative recombination by inserting a GaAs strain-relaxation interlayer in InGaAs/GaAsP superlattice solar cells investigated by photo-thermal spectroscopy;Journal of Applied Physics;2020-11-21
4. A general design guideline for strain-balanced quantum-wells toward high-efficiency photovoltaics;Solar Energy;2020-08
5. Quantum Well Solar Cells: Principles, Recent Progress, and Potential;IEEE Journal of Photovoltaics;2019-03
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