Routine growth of InP based device structures using process calibration with optical in-situ techniques
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
2. Spectroscopic process sensors in MOVPE device production
3. MOVPE process development for 650nm VCSELS using optical in-situ techniques
4. Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
5. Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantification of the As/P content in GaAsP during MOVPE growth;Applied Physics Letters;2020-08-10
2. MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance;IEEE Journal of Selected Topics in Quantum Electronics;2017-11
3. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
4. Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes;Journal of Crystal Growth;2014-05
5. MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm;Journal of Crystal Growth;2013-05
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