Quantification of the As/P content in GaAsP during MOVPE growth
Author:
Affiliation:
1. Institute of Physics, Technische Universität Ilmenau, 98693 Ilmenau, Germany
2. Research Center for Advanced Science and Technology, The University of Tokyo, Bunkyo-ku, Tokyo 153-8904, Japan
Funder
Thuringian state graduate support
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0012948
Reference38 articles.
1. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
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3. Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
4. J. F. Geisz , J. M. Olson , M. J. Romero , C. S. Jiang , and A. G. Norman , in IEEE 4th World Conference Photovoltaics Energy Conference (2006), Vol. 1, p. 772.
5. 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates
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