Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Author:
Funder
Initiation
HKUST and the Innovation Technology Fund of Hong Kong
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference143 articles.
1. Monolithic III-V/Si Integration;Fitzgerald;ECS Trans.,2008
2. Nanometre-scale electronics with III–V compound semiconductors;del Alamo;Nature,2011
3. Recent progress in lasers on silicon;Liang;Nat. Photonics,2010
4. Heteroepitaxy of GaP on Si: correlation of morphology, anti-phase-domain structure and MOVPE growth conditions;Németh;J. Crys. Growth,2008
5. GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration;Volz;J. Cryst. Growth,2011
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