Author:
Fitzgerald Eugene A.,Bulsara M. T.,Bai Y.,Cheng C.,Liu W. K.,Lubyshev D.,Fastenau J. M.,Wu Y.,Urtega M.,Ha W.,Bergman J.,Brar B.,Drazek C.,Daval N,Leterte F.,Hoke W. E.,LaRoche J. R.,Herrick Katherine J.,Kazior T. E.
Abstract
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al2O3/GaAs process for III-V MOS.
Publisher
The Electrochemical Society
Cited by
7 articles.
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