MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Dependence of polarization mode and threshold current on tensile strain in quantum well lasers
2. High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
3. Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm
4. R. Diehl, High-Power Diode Lasers: Fundamentals, Technology, Topics in Applied Physics, vol. 78, Springer-Verlag, Berlin, Heidelberg, 2000, p. 173.
5. Thermal conductivity of Ga1−xAlxAs alloys
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm;High-Power Diode Laser Technology XX;2022-03-04
2. Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer;Journal of Semiconductors;2015-01
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