Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE-Reference-Cited by-同舟云学术

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Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE

Published:2014-02 Issue: Volume:56 Page:74-78
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Habchi M.M.,Tounsi N.,Bedoui M.,Zaied I.,Rebey A.,El Jani B.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Tunable mid-infrared photodetectors employing Stark shifts of intersubband transitions in In0.05Ga0.95As/Al0.32Ga0.68As/Al0.45Ga0.55As asymmetric step quantum wells

2. The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection

3. 1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells

4. Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

5. Metamorphic InGaAs quantum wells for light emission at 1.3–1.6 μm

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1. Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range;Materials Science in Semiconductor Processing;2021-04

2. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07

3. Short-wave infrared InGaAs photodetectors and focal plane arrays;Chinese Physics B;2018-12

4. InxGa1-xAs obtained from independent target via co-sputtering deposition;Journal of Physics: Conference Series;2017-06

5. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01

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