Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference55 articles.
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3. Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers;Marko;Semicond. Sci. Technol.,2015
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1. Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure;Applied Physics A;2024-04-16
2. Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons;Materials Science in Semiconductor Processing;2024-01
3. Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects;Journal of Electronic Materials;2022-08-23
4. The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure;Micro and Nanostructures;2022-04
5. GaAs-based strain-balanced GaNxAs1-x-yBiy type-I and -II multi-quantum wells for near-infrared photodetection range;Thin Solid Films;2021-05
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