GaAs-based strain-balanced GaNxAs1-x-yBiy type-I and -II multi-quantum wells for near-infrared photodetection range

Author:

Ajnef N.,Habchi M.M.,Rebey A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications;Pan;Journal of Applied Physics,2013

2. InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm;Sprengel;2014 IEEE Photonics Society Summer Topical Meeting Series,2014

3. Band Structure and Optical Gain of InGaAs/GaAsBi type-II Quantum Wells Modeled by k.p Model;Wang;Chinese Physics Letters,2018

4. 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current matched Ge based tandem cells;Fujii;Progress in Photovoltaics: Research and Applications,2013

5. Quantum well solar cells: principles, recent progress, and potential;Sayed;Photovoltaics,2019

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