Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3681139
Reference19 articles.
1. Molecular beam epitaxy growth of GaAs1−xBix
2. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
3. GaBiAs: A material for optoelectronic terahertz devices
4. Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
5. Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique
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