Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures
Author:
Funder
Higher Education Commision, Pakistan
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10854-023-09839-0.pdf
Reference20 articles.
1. S. Tixier et al., Molecular beam epitaxy growth of GaAs1−xBix. Appl. Phys. Lett. 82(14), 2245–2247 (2003)
2. S. Francoeur et al., Band gap of GaAs1−xBix, 0 < x < 3.6%. Appl. Phys. Lett. 82(22), 3874–3876 (2003)
3. K. Alberi et al., Valence band anticrossing in Ga Bix As1–x. Appl. Phys. Lett. 91(5), 051909 (2007)
4. S. Sweeney et al., Bismide-nitride alloys: promising for efficient light emitting devices in the near-and mid-infrared. J. Appl. Phys. 113(4), 043110 (2013)
5. Z. Batool et al., The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing. J. Appl. Phys. 111(11), 113108 (2012)
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