The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4728028
Reference25 articles.
1. Molecular beam epitaxy growth of GaAs1−xBix
2. Band gap of GaAs1−xBix, 0
3. Valence band anticrossing in GaBixAs1−x
4. Similar and dissimilar aspects ofIII−Vsemiconductors containingBiversusN
5. Giant Spin-Orbit Bowing inGaAs1−xBix
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