Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer
Author:
Funder
University of Delaware Research Foundation
İstanbul Üniversitesi
Publisher
Elsevier BV
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron energy relaxation mechanism in n-type InxGa1-xAs1-yBiy alloys under electric and magnetic fields;Physica Scripta;2024-09-03
2. Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer;Applied Physics A;2024-06-26
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