Author:
Mbarki M.,Ajnef N.,Rebey A.
Publisher
Springer Science and Business Media LLC
Reference55 articles.
1. S. Kim, D.M. Geum, M.S. Park, H.S. Kim, J.D. Song, W.J. Choi, Fabrication of high-quality GaAs-based photodetector arrays on Si. Appl. Phys. Lett. 110(15), 153505 (2017)
2. P. Bai, X. Li, N. Yang, W. Chu, X. Bai, S. Huang, Z. Zhao, Broadband and photovoltaic THz/IR response in the GaAs-based ratchet photodetector. Sci. Adv. 8(21), 2031 (2022)
3. N. Papež, A. Gajdoš, R. Dallaev, D. Sobola, P. Sedlak, R. Motúz, L. Grmela, Performance analysis of GaAs based solar cells under gamma irradiation. Appl. Surf. Sci. 510, 145329 (2020)
4. Z. Zhang, L. Qian, D. Fan, X. Deng, Gallium arsenide: a new material to accomplish passively mode-locked Nd: YAG laser. Appl. Phys. Lett. 60(4), 419 (1992)
5. T.T. Kajava, A.L. Gaeta, Q switching of a diode-pumped Nd:YAG laser with GaAs. Opt. Lett. 21(16), 1244 (1996)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献