Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates

Published:2007-12-17 Issue:25 Volume:91 Page:251909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Henini M.,Ibáñez J.,Schmidbauer M.,Shafi M.,Novikov S. V.,Turyanska L.,Molina S. I.,Sales D. L.,Chisholm M. F.,Misiewicz J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2827181

Reference16 articles.

1. Characteristics of Semiconductor Alloy GaAs1-xBix

2. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy

3. Molecular beam epitaxy growth of GaAs1−xBix

4. Band gap of GaAs1−xBix, 0

5. Giant Spin-Orbit Bowing inGaAs1−xBix

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1. Bismuth incorporation and its influence on surface morphology of InAs (1 1 0);Journal of Crystal Growth;2022-05

2. GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy;Nanotechnology;2021-12-06

3. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy;Journal of Alloys and Compounds;2021-12

4. Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates;Semiconductor Science and Technology;2021-06-21

5. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

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