Strained-layer quantum well materials grown by MOCVD for diode laser application-Reference-Cited by-同舟云学术

Strained-layer quantum well materials grown by MOCVD for diode laser application

Published:2021-01 Issue: Volume:75 Page:100303
ISSN:0079-6727
Container-title:Progress in Quantum Electronics
language:en
Short-container-title:Progress in Quantum Electronics

Author:

Mawst Luke J.,Kim Honghyuk,Smith Gary,Sun Wei,Tansu Nelson

Funder

National Science Foundation

Army Research Office

US National Science Foundation

Daniel E. ‘39 and Patricia M. Smith Endowed Chair Professorship Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics

Reference221 articles.

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4. Defects in epitaxial multilayers: I. Misfit dislocations;Matthews;J. Cryst. Growth,1974

5. Stimulated emission in strained-layer quantum-well heterostructures;Camras;J. Appl. Phys.,1983

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