1. S. Francoeur, M.J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, Band gap of GaAs1-xBix, 0 < x < 3.6%. Appl. Phys. Lett. 82(22), 3874–3876 (2003)
2. Z. Batool, K. Hild, T.J.C. Hosea, X. Lu, T. Tiedje, S.J. Sweeney, The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing. J. Appl. Phys. 111, 113108 (2012)
3. S.P. Svensson, H. Hier, W.L. Sarney, D. Donetsky, D. Wang, G. Belenky, Molecular beam epitaxy control and photoluminescence properties of InAsBi. J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 30, 02109 (2012)
4. M.K. Rajpalke, W.M. Linhart, M. Birkett, K.M. Yu, D.O. Scanlon, J. Buckeridge, T.S. Jones, M.J. Ashwin, T.D. Veal, Growth and properties of GaSbBi alloys. Appl. Phys. Lett. 103, 142106 (2013)
5. Z.L. Lan, X.Q. Zhang, G.W. Yang, J. Sun, F.J. Liu, H.Q. Huang, R. Zhang, P.G. Yin, L. Guo, Y.C. Song, Structural and optical characterization of ZnO thin films grown by plasma-assisted molecular beam epitaxy. Guang Pu Xue Yu Guang Pu Fen Xi/Spectros. Spectr. Anal. 28, 253–255 (2008)