GaBiAs: A material for optoelectronic terahertz devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2205180
Reference11 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Non-stoichiometric semiconductor materials for terahertz optoelectronics applications
3. Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source
4. Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
5. Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55μm
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