Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2126110
Reference11 articles.
1. Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy
2. Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm
3. Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
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