Tunable mid-infrared photodetectors employing Stark shifts of intersubband transitions in In0.05Ga0.95As/Al0.32Ga0.68As/Al0.45Ga0.55As asymmetric step quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Large Stark effects for transitions from local states to global states in quantum well structures
2. Self‐consistent simulation of Stark shift of intersubband transition in modulation‐doped step quantum wells
3. Bias dependence of responsivity and transport in asymmetric quantum well infrared detectors
4. Electrical tunability of infrared detectors using compositionally asymmetric GaAs/AlGaAs multiquantum wells
5. Voltage tunable quantum well infrared detector
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1. Lattice strain influence on conduction band nonparabolicity in GaAs and InAs: Application to intraband optical absorption in InGaAs-GaAs asymmetric step quantum wells;Materials Science in Semiconductor Processing;2021-03
2. Influence of conduction-band non-parabolicity on terahertz intersubband Raman gain in GaAs/InGaAs step asymmetric quantum wells;Applied Physics A;2019-12-12
3. Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE;Physica E: Low-dimensional Systems and Nanostructures;2014-02
4. Properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors;Journal of Physics D: Applied Physics;2009-04-15
5. Effects of well thickness on the spectral properties of In0.5Ga0.5As∕GaAs∕Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors;Applied Physics Letters;2008-05-12
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