Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. 1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy
4. 10 Gbit∕s data modulation using 1.3 [micro sign]m InGaAs quantum dot lasers
5. Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range
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