MOCVD-Grown In<sub>0.22</sub>Ga<sub>0.78</sub>As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density-Reference-Cited by-同舟云学术

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MOCVD-Grown In_0.22Ga_0.78As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density

Published:2024-04-11 Issue:9 Volume:24 Page:3707-3713
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kim Honghyuk¹²^ORCID,Xu Shining¹,Liu Cheng¹,Lekhal Kaddour¹³,Kuech Thomas³,Mawst Luke¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, United States

2. Laser Research Center, Korea Photonics Technology Institute, Cheomdanventure-ro 108 beon-gil 9, Gwangju 61007, Republic of Korea

3. Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, United States

Funder

Ministry of Trade, Industry and Energy

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00022

Reference42 articles.

1. Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

2. InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency

3. 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

4. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

5. High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures

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