1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1759066
Reference14 articles.
1. GaAs-based long-wavelength lasers
2. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
3. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
4. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
5. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
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