Optical properties study of InxGa1−xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference38 articles.
1. The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing
2. High indium metamorphic HEMT on a GaAs substrate
3. 1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells
4. Optical property of In0.2Ga0.8As/GaAs strained multiple quantum-wells grown by using MOCVD
5. Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
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1. Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method;Crystal Research and Technology;2022-03-28
2. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07
3. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01
4. Strain study of GaAs/In x Ga 1−x As/GaAs structures grown by MOVPE;Surface and Coatings Technology;2016-06
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