Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1585125
Reference12 articles.
1. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
2. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
3. InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T0=385K) Grown by Metal Organic Chemical Vapour Deposition
4. Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
5. 1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
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