1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Published:2001-07 Issue: Volume:227-228 Page:1155-1161
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ustinov V.M,Zhukov A.E,Maleev N.A,Kovsh A.R,Mikhrin S.S,Volovik B.V,Musikhin Yu.G,Shernyakov Yu.M,Maximov M.V,Tsatsul’nikov A.F,Ledentsov N.N,Alferov Zh.I,Lott J.A,Bimberg D

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

3. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers

4. Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

5. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

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