The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance-Reference-Cited by-同舟云学术

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The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance

Published:2017-01 Issue: Volume:101 Page:436-445
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Bedoui M.,Habchi M.M.,Moussa I.,Rebey A.

Funder

Direction Générale de la Recherche Scientifique et de la Technologie

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Novel pseudomorphic high electron mobility transistor structures with GaAs‐In0.3Ga0.7As thin strained superlattice active layers

2. Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties

3. Theory and operation of a GaAs/AlGaAs/InGaAs superlattice phototransistor with controlled avalanche gain

4. Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates

5. Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07

2. Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering;Journal of Alloys and Compounds;2019-01

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