Novel pseudomorphic high electron mobility transistor structures with GaAs‐In0.3Ga0.7As thin strained superlattice active layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101146
Reference15 articles.
1. 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
2. The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET
3. Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
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1. Simulated x-ray diffraction from pseudomorphic GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05
2. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01
3. Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures;Semiconductor Science and Technology;2009-02-16
4. Photoreflectance and Photoluminescence Study of In[sub x]Ga[sub 1−x]As∕GaAs Graded-Channel High Electron Mobility Transistors;Journal of The Electrochemical Society;2006
5. Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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