0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz-Reference-Cited by-同舟云学术

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0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz

Published:1988-08 Issue:8 Volume:9 Page:374-376
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Nguyen L.D.,Radulescu D.C.,Tasker P.J.,Schaff W.J.,Eastman L.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/49/00000748.pdf?arnumber=748

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of Molecular‐Based Transistors;Advanced Materials;2018-06-06

2. Simulated x-ray diffraction from pseudomorphic GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

3. X-ray analysis of metamorphic InxGa1-xAs/InyGa1-yAs superlattices on GaAs (001) substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

4. Two-dimensional materials and their prospects in transistor electronics;Nanoscale;2015

5. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22

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