Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329349
Reference14 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Ultimate low-loss single-mode fibre at 1.55 μm
3. 1.67 µm Ga0.47In0.53As/InP DH Lasers Double Cladded with InP by LPE Technique
4. Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode
5. Zn‐diffused back‐illuminated p‐i‐n photodiodes in InGaAs/InP grown by molecular‐beam epitaxy
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE;Journal of Materials Science: Materials in Electronics;2017-08-23
2. The Structural and Optical Properties of Be-Doped GaAs Grown by MBE;Advanced Materials Research;2015-07
3. Optical properties of Si-doped and Be-doped InAlAs lattice-matched to InP grown by molecular beam epitaxy;Journal of Applied Physics;2013-09-14
4. Electrical and optical characteristics of molecular beam epitaxial Be-doped In0.53Ga0.26Al0.21As layers grown lattice-matched on InP (100) substrates;Materials Science and Engineering: B;1999-06
5. The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy;Journal of Crystal Growth;1998-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3