The Structural and Optical Properties of Be-Doped GaAs Grown by MBE-Reference-Cited by-同舟云学术

The Structural and Optical Properties of Be-Doped GaAs Grown by MBE

Published:2015-07 Issue: Volume:1118 Page:111-117
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Jia Hui Min¹,Tang Ji Long¹,Chang Liang¹,Fang Dan¹,Fang Xuan¹,Wang Xiao Hua¹,Ma Xiao Hui¹,Xu Li¹,Wei Zhi Peng¹

Affiliation:

1. Changchun University of Science and Technology

Abstract

In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.1118.111.pdf

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