RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding
2. Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy
3. 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors
4. Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's
5. High power InGaAs/GaAs laser array
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1. The Structural and Optical Properties of Be-Doped GaAs Grown by MBE;Advanced Materials Research;2015-07
2. Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy;Microelectronic Engineering;2012-01
3. InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots;Self-Assembly of Nanostructures;2011-09-20
4. Growth Interruption Effects of GaAs/AlGaAs Quantum Wells Grown by Molecular Beam Epitaxy;Journal of the Korean Vacuum Society;2010-09-30
5. The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods;Journal of Crystal Growth;2009-09
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