Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy-Reference-Cited by-同舟云学术

Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy

Published:2012-01 Issue: Volume:89 Page:6-9
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Choi Hyun Young,Cho Min Young,Yim Kwang Gug,Kim Min Su,Lee Dong-Yul,Kim Jin Soo,Kim Jong Su,Leem Jae-Young

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Growth of High Quality Mg-doped GaAs by molecular Beam Epitaxy and Its properties

2. Electrical Properties of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Using Molecular Beam Epitaxy

3. Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy

4. Thermal stability of C-doped GaAs/AlAs DBR structures

5. Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

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